Description:
| Manufacturer | Infineon Technologies | Manufacturer's Part # | IRFR5305TRPBF |
|---|---|---|---|
| Categories | Discrete Semiconductor Products | Sub-Categories | Transistors - FETs, MOSFETs - Single |
| Series | HEXFET® | Part Status | Active |
| FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55V | Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 65 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
| Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| FET Feature | - | Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak | Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Shenzhen Headquarter:
A1208, Overseas Decoration Building, #122 Zhenhua RD., Futian, Shenzhen, China
TEL.:+86-755-8981 8866
FAX.:+86-755-8427 6832
Zhongshan Office:
13B,Southmiddle,Chang'an Electronics City, Chang'an RD., Guzhen, Zhongshan, Guangdong, China
Secretary Office:
RM 2, 3/F, Ruby COMM. Building No.480, Nathan Road, Hong Kong
Hong Kong Lotistics Center:
1/F,Kwong Tai Industrial Bldg.,No,750 Cheung Sha Wan Road, Lai Chi Kok, Kowloon, Hong Kong
