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SI2301CDS-T1-E3

SI2301CDS-T1-E3

Part No.:SI2301CDS-T1-E3

Category: FETS

Manufacturer:Vishay

Date Code:

Package Type:SOT23-3

Quantity:50000

Click:18

Update Time:2022-07-04 11:06:04

Description:

Product Parameter

Manufacturer Vishay Manufacturer's Part # SI2301CDS-T1-E3
Categories Discrete Semiconductor Products Sub-Categories Transistors - FETs, MOSFETs - Single
Series TrenchFET® Part Status Active
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 112 mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 10nC @ 4.5V
Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 405pF @ 10V
FET Feature - Power Dissipation (Max) 860mW (Ta), 1.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
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