Part No.:IPB80P04P4L04ATMA1
Category:MOSFET
Manufacturer:Infineon
Date Code:
Package Type:TO263-3-2
Quantity:10000
Click:6
Update Time:2022-12-22 17:23:39
Description:
Manufacturer | Infineon Technologies | Manufacturer's Part # | IPB80P04P4L04ATMA1 |
---|---|---|---|
Categories | Discrete Semiconductor Products | Sub-Categories | Transistors - FETs, MOSFETs - Single |
Series | Automotive, AEC-Q101, OptiMOS™ | Part Status | Active |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V | Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 176nC @ 10V |
Vgs (Max) | ±16V | Input Capacitance (Ciss) (Max) @ Vds | 3800pF @ 25V |
FET Feature | - | Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Shenzhen Headquarter:
2/F,BLK. 405,Shangbu Pengji Industrial Area,Huaqiangbei,Futian,Shenzhen,China 518028
TEL.: +86-755-8981 8866
Hongkong Secretary Office:
RM 705, 7/F, Fa Yuen Commercial Building, NO.75-77, Fa Yuen Street, Kowloon, Hong Kong
TEL.:+852-6220 1873